npn 2n3019 ? 2N3020 comset semiconductors 1/3 the 2n3019 and 2N3020 are npn transistors mounted in to-39 metal case . they are intended for high-current, high -frequency amplifier applications. they feature high gain and low saturation voltages. compliance to rohs absolute maximum ratings symbol ratings value unit 2n3019 v ceo collector-emitter voltage 2N3020 80 v 2n3019 v cbo collector-base voltage 2N3020 140 v 2n3019 v ebo emitter-base voltage 2N3020 7 v 2n3019 i c collector current 2N3020 1 a 2n3019 p d total power dissipation @ t amb = 25 2N3020 0.8 2n3019 p d total power dissipation @ t case = 25 2N3020 5 watts 2n3019 t j junction temperature 2N3020 200 c 2n3019 t stg storage temperature range 2N3020 -65 to +200 c thermal characteristics symbol ratings value unit 2n3019 r thj-a thermal resistance, junction to ambient in free air 2N3020 35 c/w 2n3019 r thj-c thermal resistance, junction to case 2N3020 219 c/w s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn 2n3019 ? 2N3020 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit 2n3019 v cb =950 v, i e =0 2N3020 - - 10 na 2n3019 i cbo collector cutoff current v cb =90 v, i e =0, t j =150c 2N3020 - - 10 a 2n3019 i ebo emitter cutoff current v eb =5 v, i c =0 2N3020 - - 10 na 2n3019 v ceo collector emitter breakdown voltage i c =10 ma, i b =0 2N3020 80 - - v 2n3019 v cbo collector base breakdown voltage i c =100 a, i e =0 2N3020 140 - - v 2n3019 v ebo emitter base breakdown voltage i e =100 a, i c =0 2N3020 7 - - v 2n3019 50 - - i c =0.1 ma, v ce =10 v 2N3020 30 - 100 2n3019 90 - - i c =10 ma, v ce =10 v 2N3020 40 - 120 2n3019 100 - 300 i c =150 ma, v ce =10 v 2N3020 40 - 120 2n3019 50 - - i c =500 ma, v ce =10 v 2N3020 30 - 100 2n3019 i c =1 a, v ce =10 v 2N3020 15 - - h fe (1) dc current gain i c =150 ma, v ce =10 v t amb = -55c 2n3019 40 - - - 2n3019 i c =150 ma, i b =15 ma 2N3020 - - 0.2 2n3019 v ce(sat) (1) collector-emitter saturation voltage i c =500 ma, i b =50 ma 2N3020 - - 0.5 v be(sat) (1) base-emitter saturation voltage i c =150 ma, i b =15 ma 2n3019 - - 1.1 v 2n3019 100 - - f t transition frequency i c =50 ma, v ce =10 v f = 20 mhz 2N3020 80 - - mhz 2n3019 80 - 400 h fe small signal current gain i c =1 ma, v ce =5 v f = 1 khz 2N3020 30 - 200 - nf noise figure i c =-100 a, v ce =10 v f = 1 khz, r g = 1k ? 2n3019 - - 4 db 2n3019 c cbo collector-base capacitance i e = 0 ,v cb =10 v f = 1 mhz 2N3020 - - 12 pf 2n3019 c ebo emitter-base capacitance i c = 0 ,v eb =0.5 v f = 1 mhz 2N3020 - - 60 pf 2n3019 r bb? c b?c feedback time constant i c =10 ma, v ce =10 v f = 4 mhz 2N3020 - - 400 ps (1) pulse conditions : tp < 300 s, =2% www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn 2n3019 ? 2N3020 comset semiconductors 3/3 mechanical data case to-39 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions (mm) min typ max a 12.7 - - b - - 0.49 d - - 6.6 e - - 8.5 f - - 9.4 g 5.08 - - h - - 1.2 i - - 0.9 l 45 - - pin 1 : emitter pin 2 : base case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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